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      •   صفحهٔ اصلی
      • نشریات انگلیسی
      • Iranian Journal of Chemistry and Chemical Engineering (IJCCE)
      • Volume 38, Issue 4
      • مشاهده مورد
      •   صفحهٔ اصلی
      • نشریات انگلیسی
      • Iranian Journal of Chemistry and Chemical Engineering (IJCCE)
      • Volume 38, Issue 4
      • مشاهده مورد
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      An Investigation of SILAR Grown CdO Thin Films

      (ندگان)پدیدآور
      Murugesan, RajiniMarimuthu, KarunakaranKasinathan, KasirajanSathiah, MaheswariRathinam, Chandramohan
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      اندازه فایل: 
      484.4کیلوبایت
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      نوع مدرک
      Text
      Research Article
      زبان مدرک
      English
      نمایش کامل رکورد
      چکیده
      Cadmium oxide (CdO) thin films were deposited on the glass substrate by the modified SILAR method, using cadmium acetate dihydrate and ammonium hydroxide aqueous solution as precursors. The structural, surface morphological, elemental composition and optical properties of the deposited films were investigated via X-Ray Diffraction (XRD), scanning electron microscopy, EDAX, optical absorption, photoluminescence, and FT-IR spectroscopy. The XRD analysis reveals that the films were polycrystalline with cubic structure. Both crystallinity and grain size were found to increase with increasing solution concentration. The energy-dispersive spectroscopic analysis confirmed the presence of Cd and O elements. The films exhibited a maximum transmittance (50% - 70%) in the infra-red region. Transmittance was found to increase with increasing precursor concentration and estimated bandgap energy (Eg) was in the range of 2.17 – 2.21 eV.
      کلید واژگان
      CdO
      thin films
      XRD
      SILAR
      Optical studies
      Physical Chemistry, Surface Chemistry

      شماره نشریه
      4
      تاریخ نشر
      2019-08-01
      1398-05-10
      ناشر
      Iranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECR
      سازمان پدید آورنده
      Department of Physics, Alagappa Government Arts College, Karaikudi – 630 003, INDIA
      Department of Physics, Alagappa Government Arts College, Karaikudi – 630 003, INDIA
      Department of Physics, Alagappa Government Arts College, Karaikudi – 630 003, INDIA
      Department of Physics, Caussanel College of Arts and Science, Muthupettai – 623 523, INDIA
      Department of Physics, Sri Sevugan Annamalai College, Devakottai – 630 303, INDIA

      شاپا
      1021-9986
      URI
      http://www.ijcce.ac.ir/article_31717.html
      https://iranjournals.nlai.ir/handle/123456789/84773

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