Irradiation with Neutrons and Formation of Simple Radiation Defects in Semiconductors

Abstract

<span style="font-size: small;"><span style="font-family: Times New Roman;">In this research, cobalt and nickel sulfide nanoparticles (NPs) were grown on AlMCM-41 matrix by using ion exchange method. The prepared samples were irradiated by thermalized neutron that emitted from Am-Be source up to fluencies (7.9+E9n/cm2). After that, X-ray diffraction (XRD), UV-Vis spectroscopy, Fourier transform infrared (FTIR), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for irradiated and non-irradiated samples characterization. The results show nanoparticles aggregation in NiS/AlMCM-41 is more than CoS/AlMCM-41 sample. The TEM images show average size of CoS NPs before and after neutron radiation about 20 and 50 nm, respectively. In this way, average size of NiS anoparticles before and after neutron radiation 130 and 70 nm respectively. The DRS results show that Co2+ and Ni2+ ions produced after neutron radiation, located in tetrahedral sites in AlMCM-41. The results indicate host materials have important role in decrease of radiation defects (RDs).</span></span>