Monte Carlo Simulation of Multiplication Factor in PIN In0.52Al0.48As Avalanche Photodiodes

Abstract

In this paper, we calculate electron and hole impact<br />ionization coefficients in In0.52Al0.48As using a Monte Carlo model<br />which has two valleys and two bands for electrons and holes<br />respectively. Also, we calculate multiplication factor for electron<br />and hole initiated multiplication regimes and breakdown voltage<br />in In0.52Al0.48As PIN avalanche photodiodes. To validate the<br />model, we compare our simulated results with the experimental<br />results.