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      مشاهده مورد 
      •   صفحهٔ اصلی
      • نشریات انگلیسی
      • Signal Processing and Renewable Energy
      • Volume 1, Issue 1
      • مشاهده مورد
      •   صفحهٔ اصلی
      • نشریات انگلیسی
      • Signal Processing and Renewable Energy
      • Volume 1, Issue 1
      • مشاهده مورد
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      New Fault-Tolerant Majority Gate for Quantum Dots Cellular Automata

      (ندگان)پدیدآور
      Farazkish, Razieh
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      نوع مدرک
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      زبان مدرک
      English
      نمایش کامل رکورد
      چکیده
      In the high voltage (HV) electrical power systems, different materials are used as the role of insulation to protect the incipient failure inside the HV power equipments. One of the common phenomenas in insulations is Partial Discharge (PD). Because of the high voltage stress, the weak section inside the insulator causes the partial discharge (PD), which is known as a local electrical breakdown. The maximum amplitude of PD could accelerate the destruction process of insulation material. Also, during practical applications in the power systems, voltages with different levels are used or created suddenly. Therefore, it is necessary to analyze the effect of voltage characteristics on the PD. In this paper, the effect of DC, AC and impulse voltage on the maximum amplitude of PD are studied within the MATLAB Simulink platform. Finally, to show the effect of each voltage level on the PD, results are compared with each other in the single and multi cavity situations. The test materials for this research are epoxy resin and oil-impregnated paper. Also, this paper provides a comparison between two different insulation materials.
      کلید واژگان
      Quantum-dot cellular Automata
      Majority gate
      Nanoscale circuits
      Fault tolerance

      شماره نشریه
      1
      تاریخ نشر
      2017-03-01
      1395-12-11
      ناشر
      Islamic Azad University, South Tehran Branch
      سازمان پدید آورنده
      Department of Computer Engineering, South Tehran Branch, Islamic Azad University, Tehran, Iran

      شاپا
      2588-7327
      2588-7335
      URI
      http://spre.azad.ac.ir/article_535260.html
      https://iranjournals.nlai.ir/handle/123456789/45897

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