The Growth of Multilayer Graphene over MCM-41 by CVD Method in Atmospheric Pressure: metal–Free Nanocatalyst

Abstract

Graphene films were fabricated over synthesized MCM-41 nanocatalyst by chemical vapor<br />deposition method, and the reaction was carried in atmospheric pressure at 750˚C. Acetylene<br />gas used as a carbon precursor and the synthesis reaction took place in hydrogen atmosphere.<br />Mesoporous MCM-41 was synthesized at room temperature, using wet chemical method. The<br />synthesized metal free catalyst was characterized by XRD and N2 adsorption isotherms. The<br />catalytically synthesized graphene layers were characterized by Raman spectroscopy, scanning<br />electron microscopy (SEM), and transmission electron microscopy (TEM). The results indicated<br />that the favorable effect of MCM-41 with high BET surface area (908.76 m2/g) as an active<br />metal free nanocatalyst for fabricating graphene layers with high level of purity and homogeneity.<br />Because of simplicity, easy purification, and high yield of graphene synthesis offered by<br />this method, it is possible to use it in larger scales.