STUDY OF THE DISTORTED LAYER STRUCTURE OF SILICON WAFERS BY THE METHOD OF PLASMA-CHEMICAL ETCHING AFTER MECHANICAL MACHINING PROCESSES

Abstract

In this experimental work, by using the method of plasma-chemical etching, we have dealtwith the causes of the creation of a distorted layer on the surface of silicon wafers during mechanicalmachining processes, in addition, the elucidation of connections between the structure of this layer andcharacteristic parameters of the mechanical strength of these wafers have been studied. Experimentalresults obtained at room temperature show that after cutting and grinding processes, the mean value ofmechanical strength σ, which is apparently independent of the types of conductivity, is significantlylower than its theoretical value. Analysis of the dependence of mechanical parameters on the time ofplasma-chemical etching indicates that the lower values obtained for the mechanical strength of siliconwafers is basically due to the existence of a distorted layer and corresponding internal stresses created onthe surface of these wafers after mechanical machining. Plasma-chemical etching leads to an increase inσ value. Dependency of σ on the etching time is qualitatively described by the microstructure of thedistorted layer and parameters of the micro relief surface of the wafers. Correlation between parametersσ, H, K and the microstructure of the distorted layer allows us to suggest the method of plasma chemicaletching as a method of investigating the microstructure of the distorted layer after the mechanicalmachining processes.