Effect of Temperature on Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells

Abstract

Effects of temperature on electrical parameters of polysilicon solar cells, fabricated using the <br />phosphorous spin-on diffusion technique, have been studied. The current density–voltage<br />characteristics of polycrystalline silicon solar cells were measured in dark at different temperature<br />levels. For this purpose, a diode equivalent model was used to obtain saturation current densities<br />measured at the required temperatures. The experimental results showed that the increase in<br />temperature from 27 to 70˚C produced a rapid increase in the saturation current densities from 0.00003<br />to 0.0005A. The changes in the open circuit voltage and the short circuit current density were found to<br />be linear with the temperature variations: about 3 mV/˚C reduction in the open circuit voltage was<br />observed. Measurements of the short circuit current density revealed a very small dependency of the<br />current density on the temperature variations. Accordingly, the short circuit current density increased<br />from 17.8 to 18.4 mA with increase in temperature from 27 to 107˚C. Measurements of the output<br />power versus load resistance were obtained at different temperature levels. The results showed that the<br />output power dropped by 30% with temperature rise from 27 to 107˚C.