Electrochemical deposition of tin doped zinc selenide (SnZnSe) thin film material

Abstract

In this research study, the growth of SnZnSe thin film<strong> </strong>materials was carried out using the cationic precursor, which was an aqueous solution of 0.035 mol solution of ZnSO₄.7H₂O while the anionic precursor was 0.1 mol solution of selenium metal powder was prepared by dissolving with 4 mL of hydrogen chloride (HCl). The XRD of the films deposited on FTO substrates at different dopant concentration 1%, 2%, 3% and 4% showed the reflection peaks at (220), (221), (300), (310), (311), (222) and (320) with the lattice constant of a=7.189 Ǻ. The SEM results revealed the random distribution of tiny nano-grains on the substrate, the nano-grains were observed to agglomerate due to the presence of large free energy characteristics of small particles. The optical bandgap of the deposited material enhanced from 2.0-2.3 eV as the dopant concentration increased.