Improvement of Quality Specifications of Light-Emitting Diodes based on ‎the Photonic Crystals

Abstract

In this paper, a new structure of Light-Emitting Diodes (LEDs) based on the usage of Gallium Nitride (GaN) semiconductors has been proposed in which, in order to improve the efficiency of the output light, a reflective layer along with two Photonic Crystal (PC) layers have been employed. The applied changes and their optimization illustrated increase in output light efficiency as much as 133% with respect to a typical LED.