| dc.contributor.author | Mohajeri, Sahar | en_US |
| dc.contributor.author | Kamani, Mina | en_US |
| dc.contributor.author | Salari, Ali Akbar | en_US |
| dc.contributor.author | Noei, Maziar | en_US |
| dc.contributor.author | Ebrahimikia, Maryam | en_US |
| dc.contributor.author | Ahmadaghaei, Nastaran | en_US |
| dc.contributor.author | Molaei, Nazanin | en_US |
| dc.date.accessioned | 1399-07-08T20:16:02Z | fa_IR |
| dc.date.accessioned | 2020-09-29T20:16:02Z | |
| dc.date.available | 1399-07-08T20:16:02Z | fa_IR |
| dc.date.available | 2020-09-29T20:16:02Z | |
| dc.date.issued | 2019-02-01 | en_US |
| dc.date.issued | 1397-11-12 | fa_IR |
| dc.date.submitted | 2017-07-17 | en_US |
| dc.date.submitted | 1396-04-26 | fa_IR |
| dc.identifier.citation | Mohajeri, Sahar, Kamani, Mina, Salari, Ali Akbar, Noei, Maziar, Ebrahimikia, Maryam, Ahmadaghaei, Nastaran, Molaei, Nazanin. (2019). Adsorption of Aniline Toxic Gas on a BeO Nanotube. Iranian Journal of Chemistry and Chemical Engineering (IJCCE), 38(1), 43-48. | en_US |
| dc.identifier.issn | 1021-9986 | |
| dc.identifier.uri | http://www.ijcce.ac.ir/article_30042.html | |
| dc.identifier.uri | https://iranjournals.nlai.ir/handle/123456789/84705 | |
| dc.description.abstract | <em>Electrical sensitivity of a beryllium oxide nanotube (BeONT) was examined toward aniline (C<sub>6</sub>H<sub>5</sub> NH<sub>2</sub>) molecule by using Density Functional Theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (E<sub>ad</sub>) of aniline on the pristine nanotubes is about -19.06kcal/mol. However, when nanotube has been doped by P and S atoms, </em><em>the adsorption energy of aniline molecule was decreased. The calculation showed that when the nanotube</em><em> is doped by S, The adsorption energy is about -8.61kcal/mol and also the amount of HOMO/LUMO energy gap (E<sub>g</sub>) will reduce significantly. As a conclusion, Beryllium oxide nanotube is a suitable </em><em>adsorbent for aniline and can be used in different processes of aniline. It seems that nanotube (BeONT)</em><em> is an appropriate semiconductor after being doped. The doped BeONT in the presence of aniline generates an electrical signal directly and therefore can be potentially used for aniline sensors.</em> | en_US |
| dc.format.extent | 657 | |
| dc.format.mimetype | application/pdf | |
| dc.language | English | |
| dc.language.iso | en_US | |
| dc.publisher | Iranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECR | en_US |
| dc.relation.ispartof | Iranian Journal of Chemistry and Chemical Engineering (IJCCE) | en_US |
| dc.subject | sensor | en_US |
| dc.subject | Nanotube | en_US |
| dc.subject | DFT | en_US |
| dc.subject | Aniline | en_US |
| dc.subject | Computational Chemistry | en_US |
| dc.title | Adsorption of Aniline Toxic Gas on a BeO Nanotube | en_US |
| dc.type | Text | en_US |
| dc.type | Research Article | en_US |
| dc.contributor.department | Department of Chemistry, Ardabil Branch, Islamic Azad University, Ardabil, I.R. IRAN | en_US |
| dc.contributor.department | Department of Chemistry, College of Chemistry, Yadegar-e-Imam Khomeini (RAH) Branch,
Islamic Azad University, Tehran, I.R. IRAN | en_US |
| dc.contributor.department | Department of Chemistry, College of Chemistry, Yadegar-e-Imam Khomeini (RAH) Branch,
Islamic Azad University, Tehran, I.R. IRAN | en_US |
| dc.contributor.department | Department of Chemistry, College of Chemical Engineering, Mahshahr Branch, Islamic Azad University, Mahshahr, I.R. IRAN | en_US |
| dc.contributor.department | Department of Chemistry, College of Chemistry, Yadegar-e-Imam Khomeini (RAH) Branch,
Islamic Azad University, Tehran, I.R. IRAN | en_US |
| dc.contributor.department | Department of Chemistry, College of Chemistry, Yadegar-e-Imam Khomeini (RAH) Branch,
Islamic Azad University, Tehran, I.R. IRAN | en_US |
| dc.contributor.department | Department of Chemistry College of Chemistry, Omidiyeh Branch, Islamic Azad University, Omidiyeh, I.R. IRAN | en_US |
| dc.citation.volume | 38 | |
| dc.citation.issue | 1 | |
| dc.citation.spage | 43 | |
| dc.citation.epage | 48 | |