نمایش مختصر رکورد

dc.contributor.authorBalashabadi, p.en_US
dc.contributor.authorAssadollahi, Z.en_US
dc.contributor.authorGhasemi, M.en_US
dc.contributor.authorBakhtiari, H.en_US
dc.contributor.authorJafari-Khamse, E.en_US
dc.date.accessioned1399-07-09T03:06:15Zfa_IR
dc.date.accessioned2020-09-30T03:06:15Z
dc.date.available1399-07-09T03:06:15Zfa_IR
dc.date.available2020-09-30T03:06:15Z
dc.date.issued2013-12-01en_US
dc.date.issued1392-09-10fa_IR
dc.date.submitted2014-07-22en_US
dc.date.submitted1393-04-31fa_IR
dc.identifier.citationBalashabadi, p., Assadollahi, Z., Ghasemi, M., Bakhtiari, H., Jafari-Khamse, E.. (2013). Deposition of Al/Cu Multilayer By Double Targets Cylindrical DC Magnetron Sputtering System. Journal of Nanostructures, 3(4), 443-451. doi: 10.7508/jns.2013.04.009en_US
dc.identifier.issn2251-7871
dc.identifier.issn2251-788X
dc.identifier.urihttps://dx.doi.org/10.7508/jns.2013.04.009
dc.identifier.urihttps://jns.kashanu.ac.ir/article_5931.html
dc.identifier.urihttps://iranjournals.nlai.ir/handle/123456789/233685
dc.description.abstractA cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. The substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. The Al/ Cu multilayer film was deposited on the glass substrate at the following conditions: Working gas = Pure argon, Working pressure = 1 Pa, Cathode current = 8 A and cathode voltage = -600 V .Microstructure of the film was investigated by X-Ray Diffraction and the scanning electron microscopy analyses. The elements profile was determined by glow discharge–optical emission spectroscopy analysis. During deposition, both targets with magnetron configuration were sputtered simultaneously by argon ions. A Plasma column on the targets surface was generated by a 290 G permanent magnet unit. Two DC power supply units with three phases input and maximum output of 12 A/1000V were used to deposit the multilayer thin films. A control phase system was used to adjust output voltage.en_US
dc.languageEnglish
dc.language.isoen_US
dc.publisherUniversity of Kashanen_US
dc.relation.ispartofJournal of Nanostructuresen_US
dc.relation.isversionofhttps://dx.doi.org/10.7508/jns.2013.04.009
dc.subjectMagnetron sputteringen_US
dc.subjectMultilayeren_US
dc.subjectThin filmen_US
dc.subjectCoateren_US
dc.titleDeposition of Al/Cu Multilayer By Double Targets Cylindrical DC Magnetron Sputtering Systemen_US
dc.typeTexten_US
dc.typeResearch Paperen_US
dc.contributor.departmentRadiation application Research School, Nuclear Science &Technology Research Institute (NSTRI), Atomic Energy Organization of Iran (AEOI), P.O.Box :31485-495 ,Karaj, Iranen_US
dc.contributor.departmentRadiation application Research School, Nuclear Science &Technology Research Institute (NSTRI), Atomic Energy Organization of Iran (AEOI), P.O.Box :31485-495 ,Karaj, Iranen_US
dc.contributor.departmentRadiation application Research School, Nuclear Science &Technology Research Institute (NSTRI), Atomic Energy Organization of Iran (AEOI), P.O.Box :31485-495 ,Karaj, Iranen_US
dc.contributor.departmentRadiation application Research School, Nuclear Science &Technology Research Institute (NSTRI), Atomic Energy Organization of Iran (AEOI), P.O.Box :31485-495 ,Karaj, Iranen_US
dc.contributor.departmentDepartment of physics, University of Kashan, Kashan, P. O. Box. 87317–51167, Iranen_US
dc.citation.volume3
dc.citation.issue4
dc.citation.spage443
dc.citation.epage451


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