نمایش مختصر رکورد

dc.contributor.authorMousavi-Kamazani, M.en_US
dc.contributor.authorSalavati-Niasari, Masouden_US
dc.contributor.authorGhanbari, D.en_US
dc.date.accessioned1399-07-09T03:06:08Zfa_IR
dc.date.accessioned2020-09-30T03:06:08Z
dc.date.available1399-07-09T03:06:08Zfa_IR
dc.date.available2020-09-30T03:06:08Z
dc.date.issued2012-09-01en_US
dc.date.issued1391-06-11fa_IR
dc.date.submitted2014-05-14en_US
dc.date.submitted1393-02-24fa_IR
dc.identifier.citationMousavi-Kamazani, M., Salavati-Niasari, Masoud, Ghanbari, D.. (2012). A Facile Solvothermal Method for Synthesis of CuInS2 Nanostructures. Journal of Nanostructures, 2(3), 363-368. doi: 10.7508/jns.2012.03.012en_US
dc.identifier.issn2251-7871
dc.identifier.issn2251-788X
dc.identifier.urihttps://dx.doi.org/10.7508/jns.2012.03.012
dc.identifier.urihttps://jns.kashanu.ac.ir/article_5408.html
dc.identifier.urihttps://iranjournals.nlai.ir/handle/123456789/233646
dc.description.abstractCuInS2 nanostructures were  synthesized  via  a  simple  surfactant-free solvothermal  route.  In  this  synthesis,  thiosemicarbazide  and thioglycolic acid were used as sulfur sources. The effects of different parameters such as type of precursor and time on the morphology and particle  size  of  the  samples  have  been  investigated.  The nanostructures  were  characterized  by  means  of  X-ray  diffraction (XRD),  scanning  electron microscopy  (SEM),  energy-dispersive X- ray  analysis  (EDX),  Fourier  transform  infrared  (FT-IR)  and photoluminescence  (PL)  spectroscopy.  The  fill  factor  (FF),  open circuit voltage  (Voc), and  short circuit current  (Isc) were obtained by I–V characterization.en_US
dc.languageEnglish
dc.language.isoen_US
dc.publisherUniversity of Kashanen_US
dc.relation.ispartofJournal of Nanostructuresen_US
dc.relation.isversionofhttps://dx.doi.org/10.7508/jns.2012.03.012
dc.subjectNanostructuresen_US
dc.subjectSemiconductoren_US
dc.subjectCuInS2en_US
dc.titleA Facile Solvothermal Method for Synthesis of CuInS2 Nanostructuresen_US
dc.typeTexten_US
dc.typeResearch Paperen_US
dc.contributor.departmentInstitute of Nano Science and Nano Technology, University of Kashan, Kashan, P. O. Box. 87317–51167, I. R. Iranen_US
dc.contributor.departmentInstitute of Nano Science and Nano Technology, University of Kashan, Kashan, P. O. Box. 87317–51167, I. R. Iranen_US
dc.contributor.departmentYoung Researchers Club, Arak Branch, Islamic Azad University, Arak, Iranen_US
dc.citation.volume2
dc.citation.issue3
dc.citation.spage363
dc.citation.epage368


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