• ثبت نام
    • ورود به سامانه
    مشاهده مورد 
    •   صفحهٔ اصلی
    • نشریات انگلیسی
    • Journal of Nanostructures
    • Volume 7, Issue 1
    • مشاهده مورد
    •   صفحهٔ اصلی
    • نشریات انگلیسی
    • Journal of Nanostructures
    • Volume 7, Issue 1
    • مشاهده مورد
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Chemical Vapor Deposition Synthesis of Novel Indium Oxide Nanostructures in Strongly Reducing Growth Ambient

    (ندگان)پدیدآور
    Karn, AshishKumar, NiteshAravindan, Sivanandam
    Thumbnail
    نوع مدرک
    Text
    Research Paper
    زبان مدرک
    English
    نمایش کامل رکورد
    چکیده
    The current study reports some interesting growth of novel In2O3 nanostructures using ambient-controlled chemical vapor deposition technique in the presence of a strongly reducing hydrazine ambient. The experiments are systematically carried out by keeping either of the carrier gas flow rate or the source temperature constant, and varying the other. For each of the depositions, the growth is studied at three different locations downstream. In this paper, we report the growth of some novel nanostructures including nanodonuts, nanomushrooms, standing nanorods and long nanowires using ambient controlled chemical vapor deposition technique. Further, the nanostructures are characterized through scanning electron microscopy, transmission electron microscopy and x-ray diffraction. First, the growth of nanowires, octahedral and nanorods were verified to occur in oxidizing, inert and reducing ambient, respectively. However, a systematic variation of experimental parameters shows that different kinds of nanostructures can be obtained using highly reducing hydrazine ambient. Further, simultaneous growth of octahedral along with nanomushrooms and the hexagonal tip of the standing nanorods provides some insight into the growth mechanisms of these novel nanostructures. Possible growth mechanisms of the nanostructures are also discussed in detail.
    کلید واژگان
    Chemical Vapor Deposition
    Growth ambient
    Hydrazine
    Indium Oxide

    شماره نشریه
    1
    تاریخ نشر
    2017-01-01
    1395-10-12
    ناشر
    University of Kashan
    سازمان پدید آورنده
    St. Anthony Falls Laboratory, University of Minnesota Twin Cities, Minneapolis, MN, USA
    Yale University, Whitney Avenue, New Haven, CT, USA
    Indian Institute of Technology Delhi, Hauz Khas, New Delhi, India

    شاپا
    2251-7871
    2251-788X
    URI
    https://dx.doi.org/10.22052/jns.2017.01.008
    https://jns.kashanu.ac.ir/article_44869.html
    https://iranjournals.nlai.ir/handle/123456789/233343

    مرور

    همه جای سامانهپایگاه‌ها و مجموعه‌ها بر اساس تاریخ انتشارپدیدآورانعناوینموضوع‌‌هااین مجموعه بر اساس تاریخ انتشارپدیدآورانعناوینموضوع‌‌ها

    حساب من

    ورود به سامانهثبت نام

    آمار

    مشاهده آمار استفاده

    تازه ترین ها

    تازه ترین مدارک
    © کليه حقوق اين سامانه برای سازمان اسناد و کتابخانه ملی ایران محفوظ است
    تماس با ما | ارسال بازخورد
    قدرت یافته توسطسیناوب